[4177pcs Stoc]
- Cuid Uimhir:
- PMDPB42UN,115
- Monaróir:
- NXP USA Inc.
- Cur síos mionsonraithe:
- MOSFET 2N-CH 20V 3.9A HUSON6.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Diodes - Toilleadh Athrógach (Varicaps, Varactors), Trasraitheoirí - FETs, MOSFETs - Eagair, Diodes - Rectifiers - Eagair, Transistors - Bipolar (BJT) - Aonair, Túistéirí - TRIACanna, Diodes - Rectifiers - Aonair, Trasraitheoirí - FETanna, MOSFETanna - Aonair and Trasraitheoirí - IGBTanna - Eagair ...
- Buntáiste iomaíoch:
- We specialize in NXP USA Inc. PMDPB42UN,115 electronic components. PMDPB42UN,115 can be shipped within 24 hours after order. If you have any demands for PMDPB42UN,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMDPB42UN,115 Tréithe Táirge
Cuid Uimhir :
PMDPB42UN,115
Monaróir :
NXP USA Inc.
Cur síos :
MOSFET 2N-CH 20V 3.9A HUSON6
Sraith :
-
Stádas Cuid :
Obsolete
Cineál FET :
2 N-Channel (Dual)
Gné FET :
Logic Level Gate
Drain to Voltage Source (Vdss) :
20V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
3.9A
Rds On (Max) @ Id, Vgs :
50 mOhm @ 3.9A, 4.5V
Vgs (ú) (Max) @ Id :
1V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
3.5nC @ 4.5V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
185pF @ 10V
Cumhacht - Max :
510mW
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
6-UDFN Exposed Pad
Pacáiste Gléas Soláthraithe :
DFN2020-6
An nuacht is déanaí
B'fhéidir go mbeadh spéis agat freisin
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