SIHB30N60E-GE3 Praghsáil (USD) [13494pcs Stoc]
- 1 pcs$3.05405
- 1,000 pcs$1.47952
- Cuid Uimhir:
- SIHB30N60E-GE3
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET N-CH 600V 29A D2PAK.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon, Trasraitheoirí - IGBTanna - Aonair, Diodes - RF, Diodes - Zener - Sraith, Trasraitheoirí - FETs, MOSFETs - Eagair, Diodes - Rectifiers - Aonair, Trasraitheoirí - IGBTanna - Modúil and Transistors - Bipolar (BJT) - Sraitheanna, Réamh-c ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix SIHB30N60E-GE3 electronic components. SIHB30N60E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHB30N60E-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHB30N60E-GE3 Tréithe Táirge
Cuid Uimhir :
SIHB30N60E-GE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET N-CH 600V 29A D2PAK
Sraith :
-
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
600V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
29A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
125 mOhm @ 15A, 10V
Vgs (ú) (Max) @ Id :
4V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
130nC @ 10V
Vgs (Max) :
±30V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
2600pF @ 100V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
250W (Tc)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
D2PAK
Pacáiste / Cás :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
An nuacht is déanaí
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