SI7898DP-T1-GE3 Praghsáil (USD) [96552pcs Stoc]
- 1 pcs$0.80693
- 10 pcs$0.72958
- 100 pcs$0.58622
- 500 pcs$0.45595
- 1,000 pcs$0.37778
- Cuid Uimhir:
- SI7898DP-T1-GE3
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET N-CH 150V 3A PPAK SO-8.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - IGBTanna - Aonair, Túistéirí - TRIACanna, Thyristors - SCRanna, Diodes - Rectifiers Bridge, Diodes - Rectifiers - Aonair, Diodes - Zener - Aonair, Diodes - RF and Trasraitheoirí - IGBTanna - Eagair ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix SI7898DP-T1-GE3 electronic components. SI7898DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7898DP-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI7898DP-T1-GE3 Tréithe Táirge
Cuid Uimhir :
SI7898DP-T1-GE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET N-CH 150V 3A PPAK SO-8
Sraith :
TrenchFET®
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
150V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
3A (Ta)
Voltas Céide (Max Rds On, Min Rds Ar) :
6V, 10V
Rds On (Max) @ Id, Vgs :
85 mOhm @ 3.5A, 10V
Vgs (ú) (Max) @ Id :
4V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
21nC @ 10V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
-
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
1.9W (Ta)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
PowerPAK® SO-8
Pacáiste / Cás :
PowerPAK® SO-8
An nuacht is déanaí
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