Harwin Inc. - S0991-46R

KEY Part #: K7359507

S0991-46R Praghsáil (USD) [921392pcs Stoc]

  • 1 pcs$0.04034
  • 15,000 pcs$0.04014
  • 30,000 pcs$0.03682
  • 75,000 pcs$0.03544
  • 105,000 pcs$0.03405

Cuid Uimhir:
S0991-46R
Monaróir:
Harwin Inc.
Cur síos mionsonraithe:
RFI SHIELD CLIP MICRO TIN SMD. Specialized Cables SMT MICRO SHLD CLIP .20 - .25MM, TIN T&R
Am luaidhe caighdeánach an déantóra:
I stoc
Seilfré:
Bliain
Slis Ó:
Hong Cong
RoHS:
Modh íocaíochta:
Bealach loingsithe:
Catagóirí Teaghlaigh:
Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Glacadóirí RF, RF Antennas, RF Power Controller IC, RFID Antennas, Transponders RFID, Clibeanna, Accessories RFID, Modúil Aistritheora RF and Trealamh Meastóireachta agus Forbartha RFID, Boird ...
Buntáiste iomaíoch:
We specialize in Harwin Inc. S0991-46R electronic components. S0991-46R can be shipped within 24 hours after order. If you have any demands for S0991-46R, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

S0991-46R Tréithe Táirge

Cuid Uimhir : S0991-46R
Monaróir : Harwin Inc.
Cur síos : RFI SHIELD CLIP MICRO TIN SMD
Sraith : -
Stádas Cuid : Active
Cineál : Shield Clip
Cruth : -
Leithead : 0.035" (0.90mm)
Fad : 0.256" (6.50mm)
Airde : 0.054" (1.37mm)
Ábhar : Stainless Steel
Plating : Tin
Plating - Tiús : 118.11µin (3.00µm)
Modh astaithe : Solder
Teocht Oibriúcháin : -25°C ~ 150°C

B'fhéidir go mbeadh spéis agat freisin
  • K4A4G085WE-BIRC

    Samsung Semiconductor

    4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.

  • K4ABG165WA-MCWE

    Samsung Semiconductor

    32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

  • K4A4G085WE-BITD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.

  • K4A4G085WF-BCTD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

  • K4A4G085WF-BITD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.

  • K4A4G165WE-BCWE

    Samsung Semiconductor

    4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.