Infineon Technologies - IPL65R660E6AUMA1

KEY Part #: K6401837

IPL65R660E6AUMA1 Praghsáil (USD) [2912pcs Stoc]

  • 3,000 pcs$0.29583

Cuid Uimhir:
IPL65R660E6AUMA1
Monaróir:
Infineon Technologies
Cur síos mionsonraithe:
MOSFET N-CH 4VSON.
Am luaidhe caighdeánach an déantóra:
I stoc
Seilfré:
Bliain
Slis Ó:
Hong Cong
RoHS:
Modh íocaíochta:
Bealach loingsithe:
Catagóirí Teaghlaigh:
Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Diodes - Rectifiers Bridge, Trasraitheoirí - FETanna, MOSFETanna - Aonair, Diodes - Rectifiers - Aonair, Transistors - Bipolar (BJT) - Sraitheanna, Réamh-c, Transistors - Bipolar (BJT) - Aonair, Diodes - Toilleadh Athrógach (Varicaps, Varactors), Trasraitheoirí - JFETanna and Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon ...
Buntáiste iomaíoch:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPL65R660E6AUMA1 Tréithe Táirge

Cuid Uimhir : IPL65R660E6AUMA1
Monaróir : Infineon Technologies
Cur síos : MOSFET N-CH 4VSON
Sraith : CoolMOS™ E6
Stádas Cuid : Obsolete
Cineál FET : N-Channel
Teicneolaíocht : MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) : 650V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 7A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) : 10V
Rds On (Max) @ Id, Vgs : 660 mOhm @ 2.1A, 10V
Vgs (ú) (Max) @ Id : 3.5V @ 200µA
Muirear Geata (Qg) (Max) @ Vgs : 23nC @ 10V
Vgs (Max) : ±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 440pF @ 100V
Gné FET : -
Díscaoileadh Cumhachta (Max) : 63W (Tc)
Teocht Oibriúcháin : -40°C ~ 150°C (TJ)
Cineál Gléasta : Surface Mount
Pacáiste Gléas Soláthraithe : Thin-Pak (8x8)
Pacáiste / Cás : 4-PowerTSFN

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