TK12A60D(STA4,Q,M) Praghsáil (USD) [68442pcs Stoc]
- 1 pcs$0.60901
- 2,500 pcs$0.60598
- Cuid Uimhir:
- TK12A60D(STA4,Q,M)
- Monaróir:
- Toshiba Semiconductor and Storage
- Cur síos mionsonraithe:
- MOSFET N-CH 600V 12A TO-220SIS.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Diodes - Rectifiers Bridge, Trasraitheoirí - IGBTanna - Eagair, Trasraitheoirí - Neamhfheidhmiú Inchláraithe, Trasraitheoirí - FETs, MOSFETs - Eagair, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon, Diodes - Rectifiers - Aonair, Thyristors - SCRanna and Trasraitheoirí - IGBTanna - Aonair ...
- Buntáiste iomaíoch:
- We specialize in Toshiba Semiconductor and Storage TK12A60D(STA4,Q,M) electronic components. TK12A60D(STA4,Q,M) can be shipped within 24 hours after order. If you have any demands for TK12A60D(STA4,Q,M), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK12A60D(STA4,Q,M) Tréithe Táirge
Cuid Uimhir :
TK12A60D(STA4,Q,M)
Monaróir :
Toshiba Semiconductor and Storage
Cur síos :
MOSFET N-CH 600V 12A TO-220SIS
Sraith :
π-MOSVII
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
600V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
12A (Ta)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
550 mOhm @ 6A, 10V
Vgs (ú) (Max) @ Id :
4V @ 1mA
Muirear Geata (Qg) (Max) @ Vgs :
38nC @ 10V
Vgs (Max) :
±30V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
1800pF @ 25V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
45W (Tc)
Teocht Oibriúcháin :
150°C (TJ)
Cineál Gléasta :
Through Hole
Pacáiste Gléas Soláthraithe :
TO-220SIS
Pacáiste / Cás :
TO-220-3 Full Pack
An nuacht is déanaí
B'fhéidir go mbeadh spéis agat freisin
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