SQD100N03-3M2L_GE3 Praghsáil (USD) [113348pcs Stoc]
- 1 pcs$0.32632
- Cuid Uimhir:
- SQD100N03-3M2L_GE3
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET N-CH 30V 100A TO252AA.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon, Diodes - Zener - Sraith, Trasraitheoirí - FETs, MOSFETs - Eagair, Transistors - Bipolar (BJT) - Aonair, Trasraitheoirí - FETanna, MOSFETanna - Aonair, Trasraitheoirí - Neamhfheidhmiú Inchláraithe and Thyristors - SCRanna - Modúil ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix SQD100N03-3M2L_GE3 electronic components. SQD100N03-3M2L_GE3 can be shipped within 24 hours after order. If you have any demands for SQD100N03-3M2L_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQD100N03-3M2L_GE3 Tréithe Táirge
Cuid Uimhir :
SQD100N03-3M2L_GE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET N-CH 30V 100A TO252AA
Sraith :
Automotive, AEC-Q101, TrenchFET®
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
30V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
100A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
3.2 mOhm @ 20A, 10V
Vgs (ú) (Max) @ Id :
2.5V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
116nC @ 10V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
6316pF @ 15V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
136W (Tc)
Teocht Oibriúcháin :
-55°C ~ 175°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
TO-252AA
Pacáiste / Cás :
TO-252-3, DPak (2 Leads + Tab), SC-63
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