Taiwan Semiconductor Corporation - RS1JL R3G

KEY Part #: K6453081

RS1JL R3G Praghsáil (USD) [1264657pcs Stoc]

  • 1 pcs$0.02925

Cuid Uimhir:
RS1JL R3G
Monaróir:
Taiwan Semiconductor Corporation
Cur síos mionsonraithe:
DIODE GEN PURP 600V 800MA SUBSMA. Rectifiers 1A, 600V, GP SMF FAST RECOVERY
Am luaidhe caighdeánach an déantóra:
I stoc
Seilfré:
Bliain
Slis Ó:
Hong Cong
RoHS:
Modh íocaíochta:
Bealach loingsithe:
Catagóirí Teaghlaigh:
Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Túistéirí - DIACs, SIDACanna, Transistors - Bipolar (BJT) - Aonair, Túistéirí - TRIACanna, Transistors - Bipolar (BJT) - Sraitheanna, Réamh-c, Trasraitheoirí - FETanna, MOSFETanna - Aonair, Modúil Tiomána Cumhachta, Transistors - FETs, MOSFETs - RF and Trasraitheoirí - IGBTanna - Eagair ...
Buntáiste iomaíoch:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RS1JL R3G Tréithe Táirge

Cuid Uimhir : RS1JL R3G
Monaróir : Taiwan Semiconductor Corporation
Cur síos : DIODE GEN PURP 600V 800MA SUBSMA
Sraith : -
Stádas Cuid : Active
Cineál Dé-óid : Standard
Voltas - DC Droim ar ais (Vr) (Max) : 600V
Reatha - Meáncheartaithe (Io) : 800mA
Voltas - Ar Aghaidh (Vf) (Max) @ If : 1.3V @ 800mA
Luas : Fast Recovery =< 500ns, > 200mA (Io)
Am Téarnaimh Droim ar Ais (trr) : 250ns
Reatha - Sceitheadh ​​Droim ar Ais @ Vr : 5µA @ 600V
Capacitance @ Vr, F : 10pF @ 4V, 1MHz
Cineál Gléasta : Surface Mount
Pacáiste / Cás : DO-219AB
Pacáiste Gléas Soláthraithe : Sub SMA
Teocht Oibriúcháin - Acomhal : -55°C ~ 150°C

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