TPN4R712MD,L1Q Praghsáil (USD) [342569pcs Stoc]
- 1 pcs$0.11510
- 5,000 pcs$0.11453
- Cuid Uimhir:
- TPN4R712MD,L1Q
- Monaróir:
- Toshiba Semiconductor and Storage
- Cur síos mionsonraithe:
- MOSFET P-CH 20V 36A 8TSON ADV.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - JFETanna, Túistéirí - TRIACanna, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon, Trasraitheoirí - IGBTanna - Eagair, Trasraitheoirí - Neamhfheidhmiú Inchláraithe, Diodes - Toilleadh Athrógach (Varicaps, Varactors), Trasraitheoirí - FETs, MOSFETs - Eagair and Diodes - Rectifiers Bridge ...
- Buntáiste iomaíoch:
- We specialize in Toshiba Semiconductor and Storage TPN4R712MD,L1Q electronic components. TPN4R712MD,L1Q can be shipped within 24 hours after order. If you have any demands for TPN4R712MD,L1Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPN4R712MD,L1Q Tréithe Táirge
Cuid Uimhir :
TPN4R712MD,L1Q
Monaróir :
Toshiba Semiconductor and Storage
Cur síos :
MOSFET P-CH 20V 36A 8TSON ADV
Sraith :
U-MOSVI
Stádas Cuid :
Active
Cineál FET :
P-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
20V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
36A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
4.7 mOhm @ 18A, 4.5V
Vgs (ú) (Max) @ Id :
1.2V @ 1mA
Muirear Geata (Qg) (Max) @ Vgs :
65nC @ 5V
Vgs (Max) :
±12V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
4300pF @ 10V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
42W (Tc)
Teocht Oibriúcháin :
150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
8-TSON Advance (3.3x3.3)
Pacáiste / Cás :
8-PowerVDFN
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