RQ3E100GNTB Praghsáil (USD) [674757pcs Stoc]
- 1 pcs$0.06060
- 3,000 pcs$0.06030
- Cuid Uimhir:
- RQ3E100GNTB
- Monaróir:
- Rohm Semiconductor
- Cur síos mionsonraithe:
- MOSFET N-CH 30V 10A 8-HSMT.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Transistors - Bipolar (BJT) - Sraitheanna, Réamh-c, Trasraitheoirí - FETs, MOSFETs - Eagair, Thyristors - SCRanna - Modúil, Trasraitheoirí - FETanna, MOSFETanna - Aonair, Diodes - Rectifiers - Eagair, Trasraitheoirí - JFETanna, Diodes - RF and Trasraitheoirí - Cuspóir Speisialta ...
- Buntáiste iomaíoch:
- We specialize in Rohm Semiconductor RQ3E100GNTB electronic components. RQ3E100GNTB can be shipped within 24 hours after order. If you have any demands for RQ3E100GNTB, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RQ3E100GNTB Tréithe Táirge
Cuid Uimhir :
RQ3E100GNTB
Monaróir :
Rohm Semiconductor
Cur síos :
MOSFET N-CH 30V 10A 8-HSMT
Sraith :
-
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
30V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
10A (Ta)
Voltas Céide (Max Rds On, Min Rds Ar) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
11.7 mOhm @ 10A, 10V
Vgs (ú) (Max) @ Id :
2.5V @ 1mA
Muirear Geata (Qg) (Max) @ Vgs :
7.9nC @ 10V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
420pF @ 15V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
2W (Ta), 15W (Tc)
Teocht Oibriúcháin :
150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
8-HSMT (3.2x3)
Pacáiste / Cás :
8-PowerVDFN
An nuacht is déanaí
B'fhéidir go mbeadh spéis agat freisin
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