SCTW90N65G2V Praghsáil (USD) [1553pcs Stoc]
- 1 pcs$27.86749
- Cuid Uimhir:
- SCTW90N65G2V
- Monaróir:
- STMicroelectronics
- Cur síos mionsonraithe:
- SILICON CARBIDE POWER MOSFET 650.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - IGBTanna - Eagair, Trasraitheoirí - IGBTanna - Modúil, Trasraitheoirí - FETanna, MOSFETanna - Aonair, Diodes - Toilleadh Athrógach (Varicaps, Varactors), Transistors - Bipolar (BJT) - Aonair, Diodes - Rectifiers - Eagair, Modúil Tiomána Cumhachta and Túistéirí - DIACs, SIDACanna ...
- Buntáiste iomaíoch:
- We specialize in STMicroelectronics SCTW90N65G2V electronic components. SCTW90N65G2V can be shipped within 24 hours after order. If you have any demands for SCTW90N65G2V, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SCTW90N65G2V Tréithe Táirge
Cuid Uimhir :
SCTW90N65G2V
Monaróir :
STMicroelectronics
Cur síos :
SILICON CARBIDE POWER MOSFET 650
Sraith :
-
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
SiCFET (Silicon Carbide)
Drain to Voltage Source (Vdss) :
650V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
90A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
18V
Rds On (Max) @ Id, Vgs :
25 mOhm @ 50A, 18V
Vgs (ú) (Max) @ Id :
5V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
157nC @ 18V
Vgs (Max) :
+22V, -10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
3300pF @ 400V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
390W (Tc)
Teocht Oibriúcháin :
-55°C ~ 200°C (TJ)
Cineál Gléasta :
Through Hole
Pacáiste Gléas Soláthraithe :
HiP247™
Pacáiste / Cás :
TO-247-3
An nuacht is déanaí
B'fhéidir go mbeadh spéis agat freisin
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