[1972pcs Stoc]
- Cuid Uimhir:
- BSB017N03LX3 G
- Monaróir:
- Infineon Technologies
- Cur síos mionsonraithe:
- MOSFET N-CH 30V 147A 2WDSON.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Transistors - Bipolar (BJT) - Aonair, Trasraitheoirí - JFETanna, Túistéirí - DIACs, SIDACanna, Trasraitheoirí - IGBTanna - Aonair, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon, Diodes - Zener - Aonair, Túistéirí - TRIACanna and Trasraitheoirí - FETs, MOSFETs - Eagair ...
- Buntáiste iomaíoch:
- We specialize in Infineon Technologies BSB017N03LX3 G electronic components. BSB017N03LX3 G can be shipped within 24 hours after order. If you have any demands for BSB017N03LX3 G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSB017N03LX3 G Tréithe Táirge
Cuid Uimhir :
BSB017N03LX3 G
Monaróir :
Infineon Technologies
Cur síos :
MOSFET N-CH 30V 147A 2WDSON
Sraith :
OptiMOS™
Stádas Cuid :
Obsolete
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
30V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
32A (Ta), 147A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.7 mOhm @ 30A, 10V
Vgs (ú) (Max) @ Id :
2.2V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
102nC @ 10V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
7800pF @ 15V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
2.8W (Ta), 57W (Tc)
Teocht Oibriúcháin :
-40°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
MG-WDSON-2, CanPAK M™
Pacáiste / Cás :
3-WDSON
An nuacht is déanaí
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