Toshiba Semiconductor and Storage - TK65A10N1,S4X

KEY Part #: K6397889

TK65A10N1,S4X Praghsáil (USD) [33399pcs Stoc]

  • 1 pcs$1.34854
  • 50 pcs$1.03020
  • 100 pcs$0.92718
  • 500 pcs$0.72114
  • 1,000 pcs$0.59752

Cuid Uimhir:
TK65A10N1,S4X
Monaróir:
Toshiba Semiconductor and Storage
Cur síos mionsonraithe:
MOSFET N-CH 100V 65A TO-220.
Am luaidhe caighdeánach an déantóra:
I stoc
Seilfré:
Bliain
Slis Ó:
Hong Cong
RoHS:
Modh íocaíochta:
Bealach loingsithe:
Catagóirí Teaghlaigh:
Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Túistéirí - DIACs, SIDACanna, Transistors - FETs, MOSFETs - RF, Trasraitheoirí - IGBTanna - Modúil, Trasraitheoirí - IGBTanna - Aonair, Trasraitheoirí - FETanna, MOSFETanna - Aonair, Thyristors - SCRanna - Modúil, Diodes - Zener - Aonair and Trasraitheoirí - IGBTanna - Eagair ...
Buntáiste iomaíoch:
We specialize in Toshiba Semiconductor and Storage TK65A10N1,S4X electronic components. TK65A10N1,S4X can be shipped within 24 hours after order. If you have any demands for TK65A10N1,S4X, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK65A10N1,S4X Tréithe Táirge

Cuid Uimhir : TK65A10N1,S4X
Monaróir : Toshiba Semiconductor and Storage
Cur síos : MOSFET N-CH 100V 65A TO-220
Sraith : U-MOSVIII-H
Stádas Cuid : Active
Cineál FET : N-Channel
Teicneolaíocht : MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) : 100V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 65A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) : 10V
Rds On (Max) @ Id, Vgs : 4.8 mOhm @ 32.5A, 10V
Vgs (ú) (Max) @ Id : 4V @ 1mA
Muirear Geata (Qg) (Max) @ Vgs : 81nC @ 10V
Vgs (Max) : ±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 5400pF @ 50V
Gné FET : -
Díscaoileadh Cumhachta (Max) : 45W (Tc)
Teocht Oibriúcháin : 150°C (TJ)
Cineál Gléasta : Through Hole
Pacáiste Gléas Soláthraithe : TO-220SIS
Pacáiste / Cás : TO-220-3 Full Pack

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