[2465pcs Stoc]
- Cuid Uimhir:
- PMPB12UN,115
- Monaróir:
- NXP USA Inc.
- Cur síos mionsonraithe:
- MOSFET N-CH 20V 7.9A 6DFN.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - IGBTanna - Eagair, Thyristors - SCRanna - Modúil, Diodes - Toilleadh Athrógach (Varicaps, Varactors), Trasraitheoirí - Neamhfheidhmiú Inchláraithe, Diodes - Rectifiers - Eagair, Túistéirí - DIACs, SIDACanna, Trasraitheoirí - IGBTanna - Aonair and Transistors - Bipolar (BJT) - Aonair ...
- Buntáiste iomaíoch:
- We specialize in NXP USA Inc. PMPB12UN,115 electronic components. PMPB12UN,115 can be shipped within 24 hours after order. If you have any demands for PMPB12UN,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMPB12UN,115 Tréithe Táirge
Cuid Uimhir :
PMPB12UN,115
Monaróir :
NXP USA Inc.
Cur síos :
MOSFET N-CH 20V 7.9A 6DFN
Sraith :
-
Stádas Cuid :
Obsolete
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
20V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
7.9A (Ta)
Voltas Céide (Max Rds On, Min Rds Ar) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
18 mOhm @ 7.9A, 4.5V
Vgs (ú) (Max) @ Id :
1V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
13nC @ 4.5V
Vgs (Max) :
±8V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
886pF @ 10V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
1.7W (Ta), 12.5W (Tc)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
6-DFN2020MD (2x2)
Pacáiste / Cás :
6-UDFN Exposed Pad
An nuacht is déanaí
B'fhéidir go mbeadh spéis agat freisin
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