IPC302N12N3X1SA1 Praghsáil (USD) [29358pcs Stoc]
- 1 pcs$2.71030
- Cuid Uimhir:
- IPC302N12N3X1SA1
- Monaróir:
- Infineon Technologies
- Cur síos mionsonraithe:
- MOSFET N-CH 120V 1A SAWN ON FOIL.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Túistéirí - TRIACanna, Transistors - Bipolar (BJT) - Aonair, Thyristors - SCRanna, Trasraitheoirí - Bipolar (BJT) - RF, Trasraitheoirí - JFETanna, Diodes - Zener - Aonair, Diodes - Rectifiers Bridge and Trasraitheoirí - FETs, MOSFETs - Eagair ...
- Buntáiste iomaíoch:
- We specialize in Infineon Technologies IPC302N12N3X1SA1 electronic components. IPC302N12N3X1SA1 can be shipped within 24 hours after order. If you have any demands for IPC302N12N3X1SA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPC302N12N3X1SA1 Tréithe Táirge
Cuid Uimhir :
IPC302N12N3X1SA1
Monaróir :
Infineon Technologies
Cur síos :
MOSFET N-CH 120V 1A SAWN ON FOIL
Sraith :
OptiMOS™
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
120V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
1A (Tj)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
100 mOhm @ 2A, 10V
Vgs (ú) (Max) @ Id :
4V @ 275µA
Muirear Geata (Qg) (Max) @ Vgs :
-
Vgs (Max) :
-
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
-
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
-
Teocht Oibriúcháin :
-
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
Sawn on foil
Pacáiste / Cás :
Die
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