SIS424DN-T1-GE3 Praghsáil (USD) [200087pcs Stoc]
- 1 pcs$0.18486
- 3,000 pcs$0.17358
- Cuid Uimhir:
- SIS424DN-T1-GE3
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET N-CH 20V 35A PPAK 1212-8.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - IGBTanna - Modúil, Diodes - Rectifiers - Eagair, Diodes - Zener - Sraith, Diodes - RF, Transistors - Bipolar (BJT) - Aonair, Trasraitheoirí - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon and Trasraitheoirí - FETs, MOSFETs - Eagair ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix SIS424DN-T1-GE3 electronic components. SIS424DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIS424DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIS424DN-T1-GE3 Tréithe Táirge
Cuid Uimhir :
SIS424DN-T1-GE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET N-CH 20V 35A PPAK 1212-8
Sraith :
TrenchFET®
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
20V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
35A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
6.4 mOhm @ 19.6A, 10V
Vgs (ú) (Max) @ Id :
2.5V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
30nC @ 10V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
1200pF @ 10V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
3.7W (Ta), 39W (Tc)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
PowerPAK® 1212-8
Pacáiste / Cás :
PowerPAK® 1212-8
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