SIR626DP-T1-RE3 Praghsáil (USD) [97125pcs Stoc]
- 1 pcs$0.40258
- 3,000 pcs$0.37718
- Cuid Uimhir:
- SIR626DP-T1-RE3
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET N-CH 60V 100A POWERPAKSO.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Transistors - FETs, MOSFETs - RF, Diodes - Zener - Sraith, Trasraitheoirí - IGBTanna - Modúil, Trasraitheoirí - FETanna, MOSFETanna - Aonair, Diodes - Rectifiers - Eagair, Modúil Tiomána Cumhachta, Diodes - RF and Diodes - Rectifiers Bridge ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix SIR626DP-T1-RE3 electronic components. SIR626DP-T1-RE3 can be shipped within 24 hours after order. If you have any demands for SIR626DP-T1-RE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIR626DP-T1-RE3 Tréithe Táirge
Cuid Uimhir :
SIR626DP-T1-RE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET N-CH 60V 100A POWERPAKSO
Sraith :
TrenchFET® Gen IV
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
60V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
100A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
6V, 10V
Rds On (Max) @ Id, Vgs :
1.7 mOhm @ 20A, 10V
Vgs (ú) (Max) @ Id :
3.4V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
78nC @ 7.5V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
5130pF @ 30V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
104W (Tc)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
PowerPAK® SO-8
Pacáiste / Cás :
PowerPAK® SO-8
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