GSID200A170S3B1 Praghsáil (USD) [660pcs Stoc]
- 1 pcs$70.68933
- 4 pcs$70.33764
- Cuid Uimhir:
- GSID200A170S3B1
- Monaróir:
- Global Power Technologies Group
- Cur síos mionsonraithe:
- SILICON IGBT MODULES.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon, Trasraitheoirí - JFETanna, Diodes - Rectifiers Bridge, Diodes - Rectifiers - Aonair, Diodes - Toilleadh Athrógach (Varicaps, Varactors), Transistors - Bipolar (BJT) - Sraitheanna, Réamh-c, Transistors - Bipolar (BJT) - Aonair and Trasraitheoirí - Neamhfheidhmiú Inchláraithe ...
- Buntáiste iomaíoch:
- We specialize in Global Power Technologies Group GSID200A170S3B1 electronic components. GSID200A170S3B1 can be shipped within 24 hours after order. If you have any demands for GSID200A170S3B1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
GSID200A170S3B1 Tréithe Táirge
Cuid Uimhir :
GSID200A170S3B1
Monaróir :
Global Power Technologies Group
Cur síos :
SILICON IGBT MODULES
Sraith :
Amp+™
Stádas Cuid :
Active
Cineál IGBT :
-
Cumraíocht :
2 Independent
Miondealú Astaire an Voltais - Bailitheoir (Max) :
1200V
Reatha - Bailitheoir (Ic) (Max) :
400A
Cumhacht - Max :
1630W
Vce (ar) (Max) @ Vge, Ic :
1.9V @ 15V, 200A
Atá ann faoi láthair - Cutoff an Bhailitheora (Max) :
1mA
Ionchur Capacitance (Cies) @ Vce :
26nF @ 25V
Ionchur :
Standard
NTC Teirmeastar :
No
Teocht Oibriúcháin :
-40°C ~ 150°C
Cineál Gléasta :
Chassis Mount
Pacáiste / Cás :
D-3 Module
Pacáiste Gléas Soláthraithe :
D3
An nuacht is déanaí
B'fhéidir go mbeadh spéis agat freisin
-
VS-ENQ030L120S
Vishay Semiconductor Diodes Division
IGBT 1200V 61A 216W EMIPAK-1B. Rectifiers 30A Neutral Point Clamp Topology
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