BSB056N10NN3GXUMA1 Praghsáil (USD) [59902pcs Stoc]
- 1 pcs$0.65273
- 5,000 pcs$0.59887
- Cuid Uimhir:
- BSB056N10NN3GXUMA1
- Monaróir:
- Infineon Technologies
- Cur síos mionsonraithe:
- MOSFET N-CH 100V 9A WDSON-2.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Diodes - Rectifiers - Aonair, Thyristors - SCRanna, Trasraitheoirí - Bipolar (BJT) - RF, Trasraitheoirí - Bipolar (BJT) - Sraitheanna, Trasraitheoirí - IGBTanna - Modúil, Trasraitheoirí - FETs, MOSFETs - Eagair, Diodes - Toilleadh Athrógach (Varicaps, Varactors) and Diodes - Zener - Sraith ...
- Buntáiste iomaíoch:
- We specialize in Infineon Technologies BSB056N10NN3GXUMA1 electronic components. BSB056N10NN3GXUMA1 can be shipped within 24 hours after order. If you have any demands for BSB056N10NN3GXUMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSB056N10NN3GXUMA1 Tréithe Táirge
Cuid Uimhir :
BSB056N10NN3GXUMA1
Monaróir :
Infineon Technologies
Cur síos :
MOSFET N-CH 100V 9A WDSON-2
Sraith :
OptiMOS™
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
100V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
9A (Ta), 83A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
6V, 10V
Rds On (Max) @ Id, Vgs :
5.6 mOhm @ 30A, 10V
Vgs (ú) (Max) @ Id :
3.5V @ 100µA
Muirear Geata (Qg) (Max) @ Vgs :
74nC @ 10V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
5500pF @ 50V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
2.8W (Ta), 78W (Tc)
Teocht Oibriúcháin :
-40°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
MG-WDSON-2, CanPAK M™
Pacáiste / Cás :
3-WDSON
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