[13211pcs Stoc]
- Cuid Uimhir:
- FQD2N80TM_WS
- Monaróir:
- ON Semiconductor
- Cur síos mionsonraithe:
- MOSFET N-CH 800V 1.8A DPAK.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - Bipolar (BJT) - Sraitheanna, Modúil Tiomána Cumhachta, Thyristors - SCRanna, Transistors - Bipolar (BJT) - Sraitheanna, Réamh-c, Diodes - Rectifiers Bridge, Trasraitheoirí - Bipolar (BJT) - RF, Trasraitheoirí - Cuspóir Speisialta and Diodes - RF ...
- Buntáiste iomaíoch:
- We specialize in ON Semiconductor FQD2N80TM_WS electronic components. FQD2N80TM_WS can be shipped within 24 hours after order. If you have any demands for FQD2N80TM_WS, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQD2N80TM_WS Tréithe Táirge
Cuid Uimhir :
FQD2N80TM_WS
Monaróir :
ON Semiconductor
Cur síos :
MOSFET N-CH 800V 1.8A DPAK
Sraith :
QFET®
Stádas Cuid :
Obsolete
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
800V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
1.8A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
6.3 Ohm @ 900mA, 10V
Vgs (ú) (Max) @ Id :
5V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
15nC @ 10V
Vgs (Max) :
±30V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
550pF @ 25V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
2.5W (Ta), 50W (Tc)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
D-Pak
Pacáiste / Cás :
TO-252-3, DPak (2 Leads + Tab), SC-63
An nuacht is déanaí
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