Infineon Technologies - IPA65R650CEXKSA1

KEY Part #: K6402077

IPA65R650CEXKSA1 Praghsáil (USD) [71938pcs Stoc]

  • 1 pcs$0.47663
  • 10 pcs$0.42186
  • 100 pcs$0.31549
  • 500 pcs$0.24467
  • 1,000 pcs$0.19316

Cuid Uimhir:
IPA65R650CEXKSA1
Monaróir:
Infineon Technologies
Cur síos mionsonraithe:
MOSFET N-CH 650V TO-220-3.
Am luaidhe caighdeánach an déantóra:
I stoc
Seilfré:
Bliain
Slis Ó:
Hong Cong
RoHS:
Modh íocaíochta:
Bealach loingsithe:
Catagóirí Teaghlaigh:
Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Túistéirí - TRIACanna, Diodes - Zener - Aonair, Thyristors - SCRanna, Trasraitheoirí - IGBTanna - Aonair, Thyristors - SCRanna - Modúil, Trasraitheoirí - Bipolar (BJT) - Sraitheanna, Diodes - Rectifiers - Aonair and Trasraitheoirí - FETs, MOSFETs - Eagair ...
Buntáiste iomaíoch:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPA65R650CEXKSA1 Tréithe Táirge

Cuid Uimhir : IPA65R650CEXKSA1
Monaróir : Infineon Technologies
Cur síos : MOSFET N-CH 650V TO-220-3
Sraith : CoolMOS™ CE
Stádas Cuid : Active
Cineál FET : N-Channel
Teicneolaíocht : MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) : 650V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 7A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) : 10V
Rds On (Max) @ Id, Vgs : 650 mOhm @ 2.1A, 10V
Vgs (ú) (Max) @ Id : 3.5V @ 210µA
Muirear Geata (Qg) (Max) @ Vgs : 23nC @ 10V
Vgs (Max) : ±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 440pF @ 100V
Gné FET : -
Díscaoileadh Cumhachta (Max) : 28W (Tc)
Teocht Oibriúcháin : -40°C ~ 150°C (TJ)
Cineál Gléasta : Through Hole
Pacáiste Gléas Soláthraithe : TO-220 Full Pack
Pacáiste / Cás : TO-220-3 Full Pack

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