Cuid Uimhir :
SSM6N15AFE,LM
Monaróir :
Toshiba Semiconductor and Storage
Cur síos :
MOSFET 2N-CH 30V 0.1A ES6
Cineál FET :
2 N-Channel (Dual)
Gné FET :
Logic Level Gate
Drain to Voltage Source (Vdss) :
30V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
100mA
Rds On (Max) @ Id, Vgs :
4 Ohm @ 10mA, 4V
Vgs (ú) (Max) @ Id :
1.5V @ 100µA
Muirear Geata (Qg) (Max) @ Vgs :
-
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
7.8pF @ 3V
Teocht Oibriúcháin :
150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
SOT-563, SOT-666
Pacáiste Gléas Soláthraithe :
ES6 (1.6x1.6)