BSP89H6327XTSA1 Praghsáil (USD) [358030pcs Stoc]
- 1 pcs$0.10331
- 1,000 pcs$0.09001
- Cuid Uimhir:
- BSP89H6327XTSA1
- Monaróir:
- Infineon Technologies
- Cur síos mionsonraithe:
- MOSFET N-CH 4SOT223.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - FETs, MOSFETs - Eagair, Transistors - Bipolar (BJT) - Sraitheanna, Réamh-c, Diodes - RF, Trasraitheoirí - JFETanna, Diodes - Rectifiers - Aonair, Diodes - Zener - Sraith, Diodes - Zener - Aonair and Diodes - Toilleadh Athrógach (Varicaps, Varactors) ...
- Buntáiste iomaíoch:
- We specialize in Infineon Technologies BSP89H6327XTSA1 electronic components. BSP89H6327XTSA1 can be shipped within 24 hours after order. If you have any demands for BSP89H6327XTSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSP89H6327XTSA1 Tréithe Táirge
Cuid Uimhir :
BSP89H6327XTSA1
Monaróir :
Infineon Technologies
Cur síos :
MOSFET N-CH 4SOT223
Sraith :
SIPMOS®
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
240V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
350mA (Ta)
Voltas Céide (Max Rds On, Min Rds Ar) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
6 Ohm @ 350mA, 10V
Vgs (ú) (Max) @ Id :
1.8V @ 108µA
Muirear Geata (Qg) (Max) @ Vgs :
6.4nC @ 10V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
140pF @ 25V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
1.8W (Ta)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
PG-SOT223-4
Pacáiste / Cás :
TO-261-4, TO-261AA
An nuacht is déanaí
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