Cuid Uimhir :
TPC8018-H(TE12LQM)
Monaróir :
Toshiba Semiconductor and Storage
Cur síos :
MOSFET N-CH 30V 18A SOP8 2-6J1B
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
30V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
18A (Ta)
Voltas Céide (Max Rds On, Min Rds Ar) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
4.6 mOhm @ 9A, 10V
Vgs (ú) (Max) @ Id :
2.3V @ 1mA
Muirear Geata (Qg) (Max) @ Vgs :
38nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
2265pF @ 10V
Díscaoileadh Cumhachta (Max) :
1W (Ta)
Teocht Oibriúcháin :
150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
8-SOP (5.5x6.0)
Pacáiste / Cás :
8-SOIC (0.173", 4.40mm Width)