[2717pcs Stoc]
- Cuid Uimhir:
- H7N1002LSTL-E
- Monaróir:
- Renesas Electronics America
- Cur síos mionsonraithe:
- MOSFET N-CH 100V LDPAK.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Diodes - Rectifiers - Aonair, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon, Túistéirí - TRIACanna, Diodes - RF, Transistors - Bipolar (BJT) - Aonair, Trasraitheoirí - Neamhfheidhmiú Inchláraithe, Thyristors - SCRanna and Thyristors - SCRanna - Modúil ...
- Buntáiste iomaíoch:
- We specialize in Renesas Electronics America H7N1002LSTL-E electronic components. H7N1002LSTL-E can be shipped within 24 hours after order. If you have any demands for H7N1002LSTL-E, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
H7N1002LSTL-E Tréithe Táirge
Cuid Uimhir :
H7N1002LSTL-E
Monaróir :
Renesas Electronics America
Cur síos :
MOSFET N-CH 100V LDPAK
Sraith :
-
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
100V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
75A (Ta)
Voltas Céide (Max Rds On, Min Rds Ar) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
10 mOhm @ 37.5A, 10V
Vgs (ú) (Max) @ Id :
-
Muirear Geata (Qg) (Max) @ Vgs :
155nC @ 10V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
9700pF @ 10V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
100W (Tc)
Teocht Oibriúcháin :
150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
4-LDPAK
Pacáiste / Cás :
SC-83
An nuacht is déanaí
B'fhéidir go mbeadh spéis agat freisin
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