[833pcs Stoc]
- Cuid Uimhir:
- SIB412DK-T1-GE3
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET N-CH 20V 9A SC75-6.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Diodes - Zener - Sraith, Diodes - Toilleadh Athrógach (Varicaps, Varactors), Transistors - Bipolar (BJT) - Aonair, Diodes - Zener - Aonair, Trasraitheoirí - FETs, MOSFETs - Eagair, Thyristors - SCRanna, Thyristors - SCRanna - Modúil and Diodes - RF ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix SIB412DK-T1-GE3 electronic components. SIB412DK-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIB412DK-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIB412DK-T1-GE3 Tréithe Táirge
Cuid Uimhir :
SIB412DK-T1-GE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET N-CH 20V 9A SC75-6
Sraith :
TrenchFET®
Stádas Cuid :
Obsolete
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
20V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
9A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
34 mOhm @ 6.6A, 4.5V
Vgs (ú) (Max) @ Id :
1V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
10.16nC @ 5V
Vgs (Max) :
±8V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
535pF @ 10V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
2.4W (Ta), 13W (Tc)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
PowerPAK® SC-75-6L Single
Pacáiste / Cás :
PowerPAK® SC-75-6L
An nuacht is déanaí
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