Infineon Technologies - BSC010N04LSIATMA1

KEY Part #: K6418235

BSC010N04LSIATMA1 Praghsáil (USD) [56342pcs Stoc]

  • 1 pcs$0.69398
  • 5,000 pcs$0.56972

Cuid Uimhir:
BSC010N04LSIATMA1
Monaróir:
Infineon Technologies
Cur síos mionsonraithe:
MOSFET N-CH 40V 37A 8TDSON.
Am luaidhe caighdeánach an déantóra:
I stoc
Seilfré:
Bliain
Slis Ó:
Hong Cong
RoHS:
Modh íocaíochta:
Bealach loingsithe:
Catagóirí Teaghlaigh:
Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Transistors - Bipolar (BJT) - Aonair, Diodes - Rectifiers - Aonair, Diodes - Zener - Aonair, Diodes - Rectifiers Bridge, Transistors - Bipolar (BJT) - Sraitheanna, Réamh-c, Thyristors - SCRanna - Modúil, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon and Diodes - Toilleadh Athrógach (Varicaps, Varactors) ...
Buntáiste iomaíoch:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSC010N04LSIATMA1 Tréithe Táirge

Cuid Uimhir : BSC010N04LSIATMA1
Monaróir : Infineon Technologies
Cur síos : MOSFET N-CH 40V 37A 8TDSON
Sraith : OptiMOS™
Stádas Cuid : Active
Cineál FET : N-Channel
Teicneolaíocht : MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) : 40V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 37A (Ta), 100A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 1.05 mOhm @ 50A, 10V
Vgs (ú) (Max) @ Id : 2V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs : 87nC @ 10V
Vgs (Max) : ±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 6200pF @ 20V
Gné FET : Schottky Diode (Body)
Díscaoileadh Cumhachta (Max) : 2.5W (Ta), 139W (Tc)
Teocht Oibriúcháin : -55°C ~ 150°C (TJ)
Cineál Gléasta : Surface Mount
Pacáiste Gléas Soláthraithe : PG-TDSON-8 FL
Pacáiste / Cás : 8-PowerTDFN

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