Cuid Uimhir :
RS1P600BETB1
Monaróir :
Rohm Semiconductor
Cur síos :
RS1P600BE IS A POWER MOSFET WITH
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
100V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
17.5A (Ta), 60A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
9.7 mOhm @ 17.5A, 10V
Vgs (ú) (Max) @ Id :
4V @ 500µA
Muirear Geata (Qg) (Max) @ Vgs :
33nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
2200pF @ 50V
Díscaoileadh Cumhachta (Max) :
3W (Ta), 35W (Tc)
Teocht Oibriúcháin :
150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
8-HSOP
Pacáiste / Cás :
8-PowerTDFN