BSC018NE2LSATMA1 Praghsáil (USD) [164965pcs Stoc]
- 1 pcs$0.22421
- 5,000 pcs$0.21525
- Cuid Uimhir:
- BSC018NE2LSATMA1
- Monaróir:
- Infineon Technologies
- Cur síos mionsonraithe:
- MOSFET N-CH 25V 100A TDSON-8.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon, Diodes - Rectifiers Bridge, Diodes - Rectifiers - Eagair, Diodes - Toilleadh Athrógach (Varicaps, Varactors), Diodes - Zener - Aonair, Trasraitheoirí - IGBTanna - Eagair, Trasraitheoirí - IGBTanna - Modúil and Transistors - Bipolar (BJT) - Aonair ...
- Buntáiste iomaíoch:
- We specialize in Infineon Technologies BSC018NE2LSATMA1 electronic components. BSC018NE2LSATMA1 can be shipped within 24 hours after order. If you have any demands for BSC018NE2LSATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSC018NE2LSATMA1 Tréithe Táirge
Cuid Uimhir :
BSC018NE2LSATMA1
Monaróir :
Infineon Technologies
Cur síos :
MOSFET N-CH 25V 100A TDSON-8
Sraith :
OptiMOS™
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
25V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
29A (Ta), 100A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.8 mOhm @ 30A, 10V
Vgs (ú) (Max) @ Id :
2V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
39nC @ 10V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
2800pF @ 12V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
2.5W (Ta), 69W (Tc)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
PG-TDSON-8
Pacáiste / Cás :
8-PowerTDFN
An nuacht is déanaí
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