IPB60R060C7ATMA1 Praghsáil (USD) [21072pcs Stoc]
- 1 pcs$2.02996
- 1,000 pcs$2.01986
- Cuid Uimhir:
- IPB60R060C7ATMA1
- Monaróir:
- Infineon Technologies
- Cur síos mionsonraithe:
- MOSFET N-CH 650V 35A TO263-3.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Diodes - RF, Túistéirí - DIACs, SIDACanna, Thyristors - SCRanna - Modúil, Trasraitheoirí - Bipolar (BJT) - Sraitheanna, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon, Trasraitheoirí - Neamhfheidhmiú Inchláraithe, Trasraitheoirí - IGBTanna - Modúil and Diodes - Rectifiers - Eagair ...
- Buntáiste iomaíoch:
- We specialize in Infineon Technologies IPB60R060C7ATMA1 electronic components. IPB60R060C7ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB60R060C7ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB60R060C7ATMA1 Tréithe Táirge
Cuid Uimhir :
IPB60R060C7ATMA1
Monaróir :
Infineon Technologies
Cur síos :
MOSFET N-CH 650V 35A TO263-3
Sraith :
CoolMOS™ C7
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
650V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
35A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
60 mOhm @ 15.9A, 10V
Vgs (ú) (Max) @ Id :
4V @ 800µA
Muirear Geata (Qg) (Max) @ Vgs :
68nC @ 10V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
2850pF @ 400V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
162W (Tc)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
PG-TO263-3
Pacáiste / Cás :
TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
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