Monaróir :
Alpha & Omega Semiconductor Inc.
Cur síos :
MOSFET 2N-CH 25V 18A/31A 8DFN
Cineál FET :
2 N-Channel (Half Bridge)
Gné FET :
Logic Level Gate
Drain to Voltage Source (Vdss) :
25V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
18A, 31A
Rds On (Max) @ Id, Vgs :
3.8 mOhm @ 20A, 10V
Vgs (ú) (Max) @ Id :
1.7V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
32nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
2340pF @ 12.5V
Cumhacht - Max :
2W, 2.2W
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
8-WDFN Exposed Pad
Pacáiste Gléas Soláthraithe :
8-DFN-EP (5x6)