Cuid Uimhir :
SI4330DY-T1-E3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET 2N-CH 30V 6.6A 8-SOIC
Cineál FET :
2 N-Channel (Dual)
Gné FET :
Logic Level Gate
Drain to Voltage Source (Vdss) :
30V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
6.6A
Rds On (Max) @ Id, Vgs :
16.5 mOhm @ 8.7A, 10V
Vgs (ú) (Max) @ Id :
3V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
20nC @ 4.5V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
-
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
8-SOIC (0.154", 3.90mm Width)
Pacáiste Gléas Soláthraithe :
8-SO