[8667pcs Stoc]
- Cuid Uimhir:
- SI7888DP-T1-GE3
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET N-CH 30V 9.4A PPAK SO-8.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - Bipolar (BJT) - RF, Diodes - Toilleadh Athrógach (Varicaps, Varactors), Trasraitheoirí - FETanna, MOSFETanna - Aonair, Thyristors - SCRanna, Transistors - Bipolar (BJT) - Aonair, Diodes - Rectifiers - Eagair, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon and Túistéirí - DIACs, SIDACanna ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix SI7888DP-T1-GE3 electronic components. SI7888DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7888DP-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI7888DP-T1-GE3 Tréithe Táirge
Cuid Uimhir :
SI7888DP-T1-GE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET N-CH 30V 9.4A PPAK SO-8
Sraith :
TrenchFET®
Stádas Cuid :
Obsolete
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
30V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
9.4A (Ta)
Voltas Céide (Max Rds On, Min Rds Ar) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
12 mOhm @ 12.4A, 10V
Vgs (ú) (Max) @ Id :
2V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
10.5nC @ 5V
Vgs (Max) :
±12V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
-
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
1.8W (Ta)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
PowerPAK® SO-8
Pacáiste / Cás :
PowerPAK® SO-8
An nuacht is déanaí
B'fhéidir go mbeadh spéis agat freisin
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