Cuid Uimhir :
TSM6502CR RLG
Monaróir :
Taiwan Semiconductor Corporation
Cur síos :
MOSFET N/P-CH 60V 24A/18A 8PDFN
Cineál FET :
N and P-Channel
Drain to Voltage Source (Vdss) :
60V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
24A (Tc), 18A (Tc)
Rds On (Max) @ Id, Vgs :
34 mOhm @ 5.4A, 10V, 68 mOhm @ 4A, 10V
Vgs (ú) (Max) @ Id :
2.5V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
10.3nC @ 4.5V, 9.5nC @ 4.5V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
1159pF @ 30V, 930pF @ 30V
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
8-PowerTDFN
Pacáiste Gléas Soláthraithe :
8-PDFN (5x6)