SISA26DN-T1-GE3 Praghsáil (USD) [276574pcs Stoc]
- 1 pcs$0.13373
- Cuid Uimhir:
- SISA26DN-T1-GE3
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET N-CH 25V 60A POWERPAK1212.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Transistors - Bipolar (BJT) - Sraitheanna, Réamh-c, Trasraitheoirí - FETs, MOSFETs - Eagair, Thyristors - SCRanna - Modúil, Trasraitheoirí - IGBTanna - Aonair, Trasraitheoirí - Bipolar (BJT) - RF, Diodes - Rectifiers - Aonair, Diodes - Rectifiers - Eagair and Transistors - FETs, MOSFETs - RF ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix SISA26DN-T1-GE3 electronic components. SISA26DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISA26DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SISA26DN-T1-GE3 Tréithe Táirge
Cuid Uimhir :
SISA26DN-T1-GE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET N-CH 25V 60A POWERPAK1212
Sraith :
TrenchFET® Gen IV
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
25V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
60A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
2.65 mOhm @ 15A, 10V
Vgs (ú) (Max) @ Id :
2.5V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
44nC @ 10V
Vgs (Max) :
+16V, -12V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
2247pF @ 10V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
39W (Tc)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
PowerPAK® 1212-8S (3.3x3.3)
Pacáiste / Cás :
PowerPAK® 1212-8S
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