Toshiba Semiconductor and Storage - TK65G10N1,RQ

KEY Part #: K6402060

TK65G10N1,RQ Praghsáil (USD) [71903pcs Stoc]

  • 1 pcs$0.60117
  • 1,000 pcs$0.59818

Cuid Uimhir:
TK65G10N1,RQ
Monaróir:
Toshiba Semiconductor and Storage
Cur síos mionsonraithe:
MOSFET N-CH 100V 65A D2PAK.
Am luaidhe caighdeánach an déantóra:
I stoc
Seilfré:
Bliain
Slis Ó:
Hong Cong
RoHS:
Modh íocaíochta:
Bealach loingsithe:
Catagóirí Teaghlaigh:
Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Diodes - Rectifiers - Eagair, Trasraitheoirí - FETs, MOSFETs - Eagair, Trasraitheoirí - Neamhfheidhmiú Inchláraithe, Diodes - Rectifiers - Aonair, Thyristors - SCRanna - Modúil, Trasraitheoirí - IGBTanna - Eagair, Trasraitheoirí - IGBTanna - Modúil and Thyristors - SCRanna ...
Buntáiste iomaíoch:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK65G10N1,RQ Tréithe Táirge

Cuid Uimhir : TK65G10N1,RQ
Monaróir : Toshiba Semiconductor and Storage
Cur síos : MOSFET N-CH 100V 65A D2PAK
Sraith : U-MOSVIII-H
Stádas Cuid : Active
Cineál FET : N-Channel
Teicneolaíocht : MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) : 100V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 65A (Ta)
Voltas Céide (Max Rds On, Min Rds Ar) : 10V
Rds On (Max) @ Id, Vgs : 4.5 mOhm @ 32.5A, 10V
Vgs (ú) (Max) @ Id : 4V @ 1mA
Muirear Geata (Qg) (Max) @ Vgs : 81nC @ 10V
Vgs (Max) : ±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 5400pF @ 50V
Gné FET : -
Díscaoileadh Cumhachta (Max) : 156W (Tc)
Teocht Oibriúcháin : 150°C (TJ)
Cineál Gléasta : Surface Mount
Pacáiste Gléas Soláthraithe : D2PAK
Pacáiste / Cás : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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