IXFN26N120P Praghsáil (USD) [2391pcs Stoc]
- 1 pcs$19.11495
- 10 pcs$19.01985
- Cuid Uimhir:
- IXFN26N120P
- Monaróir:
- IXYS
- Cur síos mionsonraithe:
- MOSFET N-CH 1200V 23A SOT-227B.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Diodes - Rectifiers - Eagair, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon, Trasraitheoirí - FETs, MOSFETs - Eagair, Trasraitheoirí - Bipolar (BJT) - Sraitheanna, Transistors - FETs, MOSFETs - RF, Trasraitheoirí - Bipolar (BJT) - RF, Trasraitheoirí - IGBTanna - Eagair and Thyristors - SCRanna - Modúil ...
- Buntáiste iomaíoch:
- We specialize in IXYS IXFN26N120P electronic components. IXFN26N120P can be shipped within 24 hours after order. If you have any demands for IXFN26N120P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFN26N120P Tréithe Táirge
Cuid Uimhir :
IXFN26N120P
Monaróir :
IXYS
Cur síos :
MOSFET N-CH 1200V 23A SOT-227B
Sraith :
Polar™
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
1200V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
23A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
460 mOhm @ 13A, 10V
Vgs (ú) (Max) @ Id :
6.5V @ 1mA
Muirear Geata (Qg) (Max) @ Vgs :
225nC @ 10V
Vgs (Max) :
±30V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
14000pF @ 25V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
695W (Tc)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Chassis Mount
Pacáiste Gléas Soláthraithe :
SOT-227B
Pacáiste / Cás :
SOT-227-4, miniBLOC
An nuacht is déanaí
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