IPL65R650C6SATMA1 Praghsáil (USD) [131152pcs Stoc]
- 1 pcs$0.28202
- 5,000 pcs$0.25870
- Cuid Uimhir:
- IPL65R650C6SATMA1
- Monaróir:
- Infineon Technologies
- Cur síos mionsonraithe:
- MOSFET N-CH 8TSON.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon, Túistéirí - DIACs, SIDACanna, Trasraitheoirí - FETanna, MOSFETanna - Aonair, Modúil Tiomána Cumhachta, Diodes - Rectifiers - Aonair, Trasraitheoirí - Bipolar (BJT) - RF, Trasraitheoirí - IGBTanna - Eagair and Thyristors - SCRanna ...
- Buntáiste iomaíoch:
- We specialize in Infineon Technologies IPL65R650C6SATMA1 electronic components. IPL65R650C6SATMA1 can be shipped within 24 hours after order. If you have any demands for IPL65R650C6SATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPL65R650C6SATMA1 Tréithe Táirge
Cuid Uimhir :
IPL65R650C6SATMA1
Monaróir :
Infineon Technologies
Cur síos :
MOSFET N-CH 8TSON
Sraith :
CoolMOS™ C6
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
650V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
6.7A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
650 mOhm @ 2.1A, 10V
Vgs (ú) (Max) @ Id :
3.5V @ 210µA
Muirear Geata (Qg) (Max) @ Vgs :
21nC @ 10V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
440pF @ 100V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
56.8W (Tc)
Teocht Oibriúcháin :
-40°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
Thin-PAK (5x6)
Pacáiste / Cás :
8-PowerTDFN
An nuacht is déanaí
B'fhéidir go mbeadh spéis agat freisin
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