[12780pcs Stoc]
- Cuid Uimhir:
- IRFBE30STRR
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET N-CH 800V 4.1A D2PAK.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Transistors - Bipolar (BJT) - Aonair, Trasraitheoirí - Cuspóir Speisialta, Diodes - Zener - Aonair, Diodes - Rectifiers Bridge, Trasraitheoirí - IGBTanna - Modúil, Trasraitheoirí - FETanna, MOSFETanna - Aonair, Trasraitheoirí - JFETanna and Diodes - Rectifiers - Aonair ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix IRFBE30STRR electronic components. IRFBE30STRR can be shipped within 24 hours after order. If you have any demands for IRFBE30STRR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFBE30STRR Tréithe Táirge
Cuid Uimhir :
IRFBE30STRR
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET N-CH 800V 4.1A D2PAK
Sraith :
-
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
800V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
4.1A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
3 Ohm @ 2.5A, 10V
Vgs (ú) (Max) @ Id :
4V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
78nC @ 10V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
1300pF @ 25V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
125W (Tc)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
D2PAK
Pacáiste / Cás :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
An nuacht is déanaí
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