SISH108DN-T1-GE3 Praghsáil (USD) [465511pcs Stoc]
- 1 pcs$0.07946
- Cuid Uimhir:
- SISH108DN-T1-GE3
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET N-CHAN 20 V POWERPAK 1212.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - IGBTanna - Eagair, Trasraitheoirí - Bipolar (BJT) - RF, Trasraitheoirí - Cuspóir Speisialta, Transistors - Bipolar (BJT) - Sraitheanna, Réamh-c, Túistéirí - DIACs, SIDACanna, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon, Diodes - Rectifiers - Aonair and Diodes - Rectifiers - Eagair ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix SISH108DN-T1-GE3 electronic components. SISH108DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISH108DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SISH108DN-T1-GE3 Tréithe Táirge
Cuid Uimhir :
SISH108DN-T1-GE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET N-CHAN 20 V POWERPAK 1212
Sraith :
TrenchFET® Gen II
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
20V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
14A (Ta)
Voltas Céide (Max Rds On, Min Rds Ar) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
4.9 mOhm @ 22A, 10V
Vgs (ú) (Max) @ Id :
2V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
30nC @ 4.5V
Vgs (Max) :
±16V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
-
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
1.5W (Ta)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
PowerPAK® 1212-8SH
Pacáiste / Cás :
PowerPAK® 1212-8SH
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