Cuid Uimhir :
SI4090DY-T1-GE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET N-CH 100V 19.7A 8SOIC
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
100V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
19.7A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
6V, 10V
Rds On (Max) @ Id, Vgs :
10 mOhm @ 15A, 10V
Vgs (ú) (Max) @ Id :
3.3V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
69nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
2410pF @ 50V
Díscaoileadh Cumhachta (Max) :
3.5W (Ta), 7.8W (Tc)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
8-SO
Pacáiste / Cás :
8-SOIC (0.154", 3.90mm Width)