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  1. Baile
  2. Táirgí
  3. DRAM
  4. DDR3
  5. K4B4G1646E-BCMA

Samsung Semiconductor - K4B4G1646E-BCMA

KEY Part #: K7359700

[15107pcs Stoc]

    Cuid Uimhir:
    K4B4G1646E-BCMA
    Monaróir:
    Samsung Semiconductor
    Cur síos mionsonraithe:
    4 Gb 512M x 8 1866 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production.
    Am luaidhe caighdeánach an déantóra:
    I stoc
    Seilfré:
    Bliain
    Slis Ó:
    Hong Cong
    RoHS:
    Modh íocaíochta:
    Bealach loingsithe:
    Catagóirí Teaghlaigh:
    Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: LPDDR5, SLC Nand, LPDDR3, DDR4, LPDDR4, GDDR6, GDDR5 and MODULE ...
    Buntáiste iomaíoch:
    We specialize in Samsung Semiconductor K4B4G1646E-BCMA electronic components. K4B4G1646E-BCMA can be shipped within 24 hours after order. If you have any demands for K4B4G1646E-BCMA, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B4G1646E-BCMA Tréithe Táirge

    Cuid Uimhir : K4B4G1646E-BCMA
    Monaróir : Samsung Semiconductor
    Cur síos : 4 Gb 512M x 8 1866 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production
    Sraith : DDR3
    Dlús : 4 Gb
    Org. : 512M x 8
    Luas : 1866 Mbps
    voltage : 1.5 V
    Meán. : 0 ~ 85 °C
    pacáiste : 96FBGA
    Stádas Táirge : Mass Production

    An nuacht is déanaí

    Samsung Memory Solutions for Automotive
    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
    Samsung wins 46 CES 2020 Innovation Awards for Outstanding Design and Engineering
    5G and Memory - from Connected Thinking to Connected Living
    Evolving Mobile Solutions: Samsung at MWC 2018
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
    Autonomous Driving and the Quest for Safety
    Samsung Enhances Functional Safety to its Automotive Semiconductors with ISO 26262 Certification
    Samsung Z-SSD SZ985
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    High Bandwidth Memory is Catching on for Data-intensive Computing
    [Video] 5G memory solutions : 5G. All in the Memory.
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    • M378A1K43CB2-CRC

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    • M378A1K43CB2-CTD

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      DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

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