Mura bhfuil do shuíomh liostaithe, roghnaigh ceann amháin díobh seo a leanas le do thoil:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski

Mura bhfuil do shuíomh liostaithe, roghnaigh ceann amháin díobh seo a leanas le do thoil:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Baile
  2. Táirgí
  3. DRAM
  4. DDR3
  5. K4B4G0846R-BHMA

Samsung Semiconductor - K4B4G0846R-BHMA

KEY Part #: K7359686

[24090pcs Stoc]

    Cuid Uimhir:
    K4B4G0846R-BHMA
    Monaróir:
    Samsung Semiconductor
    Cur síos mionsonraithe:
    4 Gb 512M x 8 1866 Mbps 1.35 V -40 ~ 105 °C 78FBGA Mass Production.
    Am luaidhe caighdeánach an déantóra:
    I stoc
    Seilfré:
    Bliain
    Slis Ó:
    Hong Cong
    RoHS:
    Modh íocaíochta:
    Bealach loingsithe:
    Catagóirí Teaghlaigh:
    Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: HBM Flarebolt, DDR3, DDR4, HBM Aquabolt, GDDR6, LPDDR3, LPDDR5 and LPDDR4 ...
    Buntáiste iomaíoch:
    We specialize in Samsung Semiconductor K4B4G0846R-BHMA electronic components. K4B4G0846R-BHMA can be shipped within 24 hours after order. If you have any demands for K4B4G0846R-BHMA, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B4G0846R-BHMA Tréithe Táirge

    Cuid Uimhir : K4B4G0846R-BHMA
    Monaróir : Samsung Semiconductor
    Cur síos : 4 Gb 512M x 8 1866 Mbps 1.35 V -40 ~ 105 °C 78FBGA Mass Production
    Sraith : DDR3
    Dlús : 4 Gb
    Org. : 512M x 8
    Luas : 1866 Mbps
    voltage : 1.35 V
    Meán. : -40 ~ 105 °C
    pacáiste : 78FBGA
    Stádas Táirge : Mass Production

    An nuacht is déanaí

    Speed for the next generation of mobile devices
    How Will 5G Impact on Memory?
    Samsung wins 46 CES 2020 Innovation Awards for Outstanding Design and Engineering
    Evolving Mobile Solutions: Samsung at MWC 2018
    Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP
    Inside the building blocks of the 5G future
    Samsung Rolls Out Industry’s First 8GB LPDDR4 DRAM Package
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    The future of NAND technology
    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    B'fhéidir go mbeadh spéis agat freisin
    • M378A1K43BB1-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • K3UH5H50AM-AGCL

      Samsung Semiconductor

      32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 556FBGA Mass Production.

    • K3UH5H50AM-EGCL

      Samsung Semiconductor

      32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 376FBGA Mass Production.

    • K3UH5H50AM-JGCL

      Samsung Semiconductor

      32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 432FBGA Mass Production.

    • K3UH6H60BM-AGCL

      Samsung Semiconductor

      48 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 556FBGA Mass Production.

    • K3UH6H60BM-EGCL

      Samsung Semiconductor

      48 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 376FBGA Mass Production.

    Páirteanna Te