[3839pcs Stoc]
- Cuid Uimhir:
- SI5509DC-T1-E3
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET N/P-CH 20V 6.1A 1206-8.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Diodes - Rectifiers - Aonair, Trasraitheoirí - Bipolar (BJT) - RF, Trasraitheoirí - FETs, MOSFETs - Eagair, Diodes - Toilleadh Athrógach (Varicaps, Varactors), Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Sraitheanna, Réamh-c, Thyristors - SCRanna and Trasraitheoirí - Bipolar (BJT) - Sraitheanna ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix SI5509DC-T1-E3 electronic components. SI5509DC-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI5509DC-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI5509DC-T1-E3 Tréithe Táirge
Cuid Uimhir :
SI5509DC-T1-E3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET N/P-CH 20V 6.1A 1206-8
Sraith :
TrenchFET®
Stádas Cuid :
Obsolete
Cineál FET :
N and P-Channel
Gné FET :
Logic Level Gate
Drain to Voltage Source (Vdss) :
20V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
6.1A, 4.8A
Rds On (Max) @ Id, Vgs :
52 mOhm @ 5A, 4.5V
Vgs (ú) (Max) @ Id :
2V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
6.6nC @ 5V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
455pF @ 10V
Cumhacht - Max :
4.5W
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
8-SMD, Flat Lead
Pacáiste Gléas Soláthraithe :
1206-8 ChipFET™
An nuacht is déanaí
B'fhéidir go mbeadh spéis agat freisin
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