SIZ200DT-T1-GE3 Praghsáil (USD) [192003pcs Stoc]
- 1 pcs$0.19264
- Cuid Uimhir:
- SIZ200DT-T1-GE3
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET N-CH DUAL 30V.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Thyristors - SCRanna, Trasraitheoirí - Neamhfheidhmiú Inchláraithe, Thyristors - SCRanna - Modúil, Trasraitheoirí - Cuspóir Speisialta, Transistors - FETs, MOSFETs - RF, Trasraitheoirí - FETanna, MOSFETanna - Aonair, Trasraitheoirí - IGBTanna - Aonair and Diodes - RF ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix SIZ200DT-T1-GE3 electronic components. SIZ200DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZ200DT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIZ200DT-T1-GE3 Tréithe Táirge
Cuid Uimhir :
SIZ200DT-T1-GE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET N-CH DUAL 30V
Sraith :
TrenchFET® Gen IV
Stádas Cuid :
Active
Cineál FET :
2 N-Channel (Dual)
Gné FET :
Standard
Drain to Voltage Source (Vdss) :
30V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs :
5.5 mOhm @ 10A, 10V, 5.8 mOhm @ 10A, 10V
Vgs (ú) (Max) @ Id :
2.4V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
28nC @ 10V, 30nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
1510pF @ 15V, 1600pF @ 15V
Cumhacht - Max :
4.3W (Ta), 33W (Tc)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
8-PowerWDFN
Pacáiste Gléas Soláthraithe :
8-PowerPair® (3.3x3.3)
An nuacht is déanaí
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