SI4925BDY-T1-E3 Praghsáil (USD) [164478pcs Stoc]
- 1 pcs$0.22488
- 2,500 pcs$0.19003
- Cuid Uimhir:
- SI4925BDY-T1-E3
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET 2P-CH 30V 5.3A 8-SOIC.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Diodes - Zener - Sraith, Trasraitheoirí - IGBTanna - Aonair, Trasraitheoirí - IGBTanna - Eagair, Trasraitheoirí - Bipolar (BJT) - RF, Diodes - Rectifiers - Aonair, Diodes - Toilleadh Athrógach (Varicaps, Varactors), Trasraitheoirí - Bipolar (BJT) - Sraitheanna and Transistors - Bipolar (BJT) - Aonair ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix SI4925BDY-T1-E3 electronic components. SI4925BDY-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI4925BDY-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4925BDY-T1-E3 Tréithe Táirge
Cuid Uimhir :
SI4925BDY-T1-E3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET 2P-CH 30V 5.3A 8-SOIC
Sraith :
TrenchFET®
Stádas Cuid :
Active
Cineál FET :
2 P-Channel (Dual)
Gné FET :
Logic Level Gate
Drain to Voltage Source (Vdss) :
30V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
5.3A
Rds On (Max) @ Id, Vgs :
25 mOhm @ 7.1A, 10V
Vgs (ú) (Max) @ Id :
3V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
50nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
-
Cumhacht - Max :
1.1W
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
8-SOIC (0.154", 3.90mm Width)
Pacáiste Gléas Soláthraithe :
8-SO
An nuacht is déanaí
B'fhéidir go mbeadh spéis agat freisin
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