Monaróir :
Rohm Semiconductor
Cur síos :
MOSFET 2N-CH 20V 1.5A TUMT6
Cineál FET :
2 N-Channel (Dual)
Gné FET :
Logic Level Gate
Drain to Voltage Source (Vdss) :
20V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
1.5A
Rds On (Max) @ Id, Vgs :
180 mOhm @ 1.5A, 4.5V
Vgs (ú) (Max) @ Id :
1V @ 1mA
Muirear Geata (Qg) (Max) @ Vgs :
2.5nC @ 4.5V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
110pF @ 10V
Teocht Oibriúcháin :
150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
6-SMD, Flat Leads
Pacáiste Gléas Soláthraithe :
TUMT6