Cuid Uimhir :
SSM6N58NU,LF
Monaróir :
Toshiba Semiconductor and Storage
Cur síos :
MOSFET 2N-CH 30V 4A UDFN6
Cineál FET :
2 N-Channel (Dual)
Gné FET :
Logic Level Gate, 1.8V Drive
Drain to Voltage Source (Vdss) :
30V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
4A
Rds On (Max) @ Id, Vgs :
84 mOhm @ 2A, 4.5V
Vgs (ú) (Max) @ Id :
1V @ 1mA
Muirear Geata (Qg) (Max) @ Vgs :
1.8nC @ 4.5V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
129pF @ 15V
Teocht Oibriúcháin :
150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
6-WDFN Exposed Pad
Pacáiste Gléas Soláthraithe :
6-UDFN (2x2)