Cuid Uimhir :
DMN2029USD-13
Monaróir :
Diodes Incorporated
Cur síos :
MOSFET 2N-CH 20V 5.8A 8SO
Cineál FET :
2 N-Channel (Dual)
Gné FET :
Logic Level Gate
Drain to Voltage Source (Vdss) :
20V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
5.8A
Rds On (Max) @ Id, Vgs :
25 mOhm @ 6.5A, 4.5V
Vgs (ú) (Max) @ Id :
1.5V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
18.6nC @ 8V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
1171pF @ 10V
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
8-SOIC (0.154", 3.90mm Width)
Pacáiste Gléas Soláthraithe :
8-SO