Monaróir :
Rohm Semiconductor
Cur síos :
30V NCHNCH MID POWER MOSFET
Cineál FET :
2 N-Channel (Half Bridge)
Drain to Voltage Source (Vdss) :
30V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
27A, 57A
Rds On (Max) @ Id, Vgs :
4.6 mOhm @ 20A, 10V
Vgs (ú) (Max) @ Id :
2.5V @ 1mA
Muirear Geata (Qg) (Max) @ Vgs :
16.8nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
1080pF @ 15V
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
8-PowerTDFN
Pacáiste Gléas Soláthraithe :
8-HSOP